High mobility electron-conducting thin-film transistors by organic vapor phase deposition
(2008) Applied Physics Letters — Vol. 93, n° 3 (2008)
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- In this letter, we report on the growth of thin films of N,N-'-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (PTCDI-C13H27) by organic vapor phase deposition (OVPD). Uniform films are deposited with a material utilization efficiency of 59 +/- 4% and deposition rates up to 15 angstrom/s. Top-contact transistors based on OVPD-grown PTCDI-C13H27 show high n-type mobilities (up to 0.3 cm(2)/V s) and reproducible characteristics. The influence of deposition parameters on electrical properties is discussed. (C) 2008 American Institute of Physics.
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Rolin, C., Vasseur, K., Schols, S., Jouk, M., Duhoux, G., Mueller, R., Genoe, J., & Heremans, P. (2008). High mobility electron-conducting thin-film transistors by organic vapor phase deposition. Applied Physics Letters, 93(3). https://doi.org/10.1063/1.2958229 (Original work published 2008)