Substrate bias effects in MuGFETs

Lee, Chi-Woo;Borne, A.;Ferain, Isabelle;Afzalian, Aryan;Colinge, Jean-Pierre;et.al.
(2010) 2010 EUROSOI Conference — Location: Grenoble (France) (25.January.2010)

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Authors
  • Lee, Chi-WooTyndall National Institute, University of Cork
    Author
  • Borne, A.Phelma, INPG, Grenoble (France)
    Author
  • Ferain, IsabelleTyndall National Institute, University of Cork
    Author
  • Afzalian, AryanUCLouvain
    Author
  • Colinge, Jean-PierreTyndall National Institute, University of Cork
    Author
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Abstract
This paper investigates the influence of substrate bias of junctionless (JL) and Inversion-Mode (IM) MuGFETs such as a variation of threshold voltage. The JL MuGFET has a similar response to positive substrate bias as an IM MuGFET. However, narrow JL MuGFETs are far more sensitive to negative substrate bias than IM MuGFET.
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Lee, C.-W., Borne, A., Ferain, I., Afzalian, A., Yan, R., Dehdashti-Akhavan, N., Razavi, P., & Colinge, J.-P. (2010). Substrate bias effects in MuGFETs. Proceedings of the 2010 EUROSOI Conference, 2 pages. https://hdl.handle.net/2078.5/253468