Effect of quantum confinement in SOI single-hole transistors
(2001) Silicon-On-Insulator Technology and Devices X. Proceedings of the Tenth International Symposium — Location: Washington, DC, USA (25.March.2001)
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- Abstract
- SOI single-hole transistors with various designed pattern sizes have been fabricated by converting a quantum wire to an island (or multiple islands) contacted to the source and the drain. The Coulomb blockade effect has been observed. Quantum mechanics has been investigated by solving the Poisson and Schrodinger equations in a self-consistent manner. The results show that the lower ground-state energy of the hole in narrow constrictions serves as a potential barrier which results in a Coulomb blockade effect.
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Citations
Xiaohui Tang, Baie, X., Colinge, J. P., Van De Wiele, F., & Bayot, V. (2001). Effect of quantum confinement in SOI single-hole transistors. In Cristoloveanu, S.; Hemment, P.L.F.; Izumi, K.T.; Celler, G.K.; Assaderaghi, F.; Kim, Y-W; (ed.), Silicon-on-Insulator Technology and Devices X. Proceedings of the TenthInternational Symposium (Electrochemical Society Proceedings Vol.2001-3) (p. p. 415-420). Electrochem. soc. https://hdl.handle.net/2078.5/230991