Temperature behavior of spiral inductors on high resistivity substrate in SOI CMOS technology
(2008) Solid-State Electronics — Vol. 52, n° 12, p. 1915-1923 (2008)
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- This paper reviews and analyzes a compact model for integrated planar spiral inductors on standard and high resistivity substrates in silicon-on-insulator (SOI) technology. The inductors have been characterized over a temperature range from 25 to 200 degrees C. The temperature variation of each model parameter has been investigated. It demonstrates that only the variations of the metallic losses versus temperature have to be taken into account to model properly the high frequency behavior over a wide temperature range of a spiral inductor integrated on silicon high resistivity substrate. Based on these experimental and characterization results, guidelines for practical inductor designs in RFICs for high-temperature applications are drawn. (C) 2008 Elsevier Ltd. All rights reserved.
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El Kaamouchi, M., Delatte, P., Moussa, M. S., Raskin, J.-P., & Vanhoenacker-Janvier, D. (2008). Temperature behavior of spiral inductors on high resistivity substrate in SOI CMOS technology. Solid-State Electronics, 52(12), 1915-1923. https://doi.org/10.1016/j.sse.2008.06.060 (Original work published 2008)