Characteriztaion and modeling of Ultra-Thin Body fully-depleted SOI MOSFETs
(2013)
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- Abstract
- (en) Traditional scaling methodology which utilizes channel doping, shallow junctions, etc. is no longer sufficient to control the short channel effects (SCE) in the devices scaled down into decananometer range. For ultimate scaling when the SCE control becomes more crucial, alternative architectures such as e.g. ultra-thin body (UTB) silicon-on-insulator (SOI) offer better SCE control while maintaining very high device performances. Ultra-thin body device featuring ultra-thin buried oxide (UTBB) is the focus of this study. In the beginning of the thesis, the impact of the buried oxide thinning from standard (140 nm) to ultra-thin (10 nm) dimensions is investigated through experiments and simulations paying particular attention to the impact of drain and substrate biases. Better electrostatic control with lower DIBL can be achieved in UTBB devices compared to UTB ones. However, thin buried oxide triggers stronger influence of substrate depletion and coupling through the substrate on the device behavior. Simulations and experiments demonstrate that introduction of so-called ground-plane (i.e. localized highly-doped region in the substrate just underneath the BOX) can eliminate the substrate depletion effect without deteriorating the other benefits. Next, widely-employed by industry MASTAR equations for DIBL and subthreshold slope are modified in order to take into account the mean channel position and substrate depletion thickness as a function of substrate bias. In addition, the perspectives of UTBB for analog and RF applications are experimentally analyzed and benchmarked with other state-of-the art technologies. Lastly, the experimental and simulation study of UTBB MOSFETs is extended to Asymmetric Double Gate (ADG) operation regime. ADG-mode is shown to significantly improve device performance with final cut-off in the same frequency range as in single-gate mode.
- Affiliations
UCLouvain SST/ICTM/ICTM - Institute of Information and Communication Technologies, Electronics and Applied Mathematics
Citations
Md Arshad, M. K. (2013). Characteriztaion and modeling of Ultra-Thin Body fully-depleted SOI MOSFETs. https://hdl.handle.net/2078.5/77805