Zero Temperature Coefficient of Current Gain Cutoff Frequency and Maximum Oscillation Frequency for Various SOI and Si bulk MOSFETs
(2011) The 219th Electrochemical Society Meeting – ECS 2011 — Location: Montreal, QC, Canada (1.May.2011)
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- Abstract
- A Zero Temperature Coefficient characteristic is presented and characterized for the first time for current gain cutoff frequency and maximum oscillation frequency of different MOSFET structures. The benefits of these points on the design of RF circuits are of first importance especially for harsh environment applications and high density RF circuits.
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Citations
Emam, M., Vanhoenacker-Janvier, D., & Raskin, J.-P. (2011). Zero Temperature Coefficient of Current Gain Cutoff Frequency and Maximum Oscillation Frequency for Various SOI and Si bulk MOSFETs. Proceedings of the 219th Electrochemical Society Meeting – ECS 2011, p. paper 1446. https://hdl.handle.net/2078.5/231078