Harmonic distorsion characterization techniques for SOI MOSFETs
(2002) Union Radio-Scientifique Internationale (U.R.S.I.) — Location: Royal Military Academy, Brussels (Belgium) (13.December.2002)
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- Abstract
- The performances of microwave transceivers depend on the knowledge of their non-linear behavior. As Silicon-on-Insulator (SOI) is one of the most promising low cost technology for integrated low-voltage, low-power circuits operating at microwave frequencies [1], we focus on the distorsion characterization of SOI nMOSFET. Several techniques to measure and characterize the distorsion of MOSFETs are already available. Some are based on the measured output DC curves, by applying Fourier analysis via the calculation of high-order derivatives of the characteristic [2] and more recently an integral method [3] was proposed. They lead to self results, but integral method has the advantage not to need evaluation of derivatives which are very sensitive to the measurements noise. While those are cheap and rapid techniques, they neglect the non-linearities associated with memory and high-frequency effects. Other techniques based on RF measurements, require more specific equipment as a sampling oscilloscope or a Large-Signal Network Analyser (LSNA) [4]. This last technique offer full characterization, at the price of an expensive and non-widespread experimental set-up.
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Citations
Parvais, B., Torrese, G., Cerderia, A., Schreurs, D., & Raskin, J.-P. (2002). Harmonic distorsion characterization techniques for SOI MOSFETs. Union Radio-Scientifique Internationale (U.R.S.I.), Royal Military Academy, Brussels (Belgium). https://hdl.handle.net/2078.5/228100