Analysis of nonuniformly doped SOI MOSFETs
(1988) Solid State Devices. Proceedings of the 17th European Solid State Device Research Conference, ESSDERC ’87 — Location: Bologna, Italy (14.September.1987)
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- Abstract
- A one-dimensional device simulator is developed for nonuniformly doped SOI MOSFETs which allows one to calculate accurately and reliably their electrical characteristics in the linear region. NMOS and PMOS transistors have been successfully optimized in relation to the process implantation parameters. Comparison with experimental results is presented.
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Citations
Paelinck, P., Vancauwenberghe, O., & Van de Wiele, F. (1988). Analysis of nonuniformly doped SOI MOSFETs. In Soncini, G.; Calzolari, P.U.; (ed.), Solid State Devices. Proceedings of the 17th European Solid StateDevice Research Conference, ESSDERC ’87 (p. p. 557-560). North-holland. https://hdl.handle.net/2078.5/219247