Effect of gate oxide scaling on RF performance of SOI MOSFETs
(2011) 11th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - SiRF′11 — Location: Phoenix, Arizona, USA (17.January.2011)
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- Abstract
- Although scaling down the dimensions of transistors is a main requirement for digital applications, it could be problematic for RF applications. This paper shows the importance of relaxing the scaling rules for the gate oxide thickness in order to optimize the benefits of scaling.
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Emam, M., Vanhoenacker-Janvier, D., & Raskin, J.-P. (2011). Effect of gate oxide scaling on RF performance of SOI MOSFETs. Proceedings of the 11th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - SiRF′11. Published. 11th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - SiRF′11, Phoenix, Arizona, USA. https://doi.org/10.1109/SIRF.2011.5719322