MultiGate SOI MOSFETs: Accumulation-Mode vs. Enhancement-Mode

Afzalian, Aryan;Lederer, Dimitri;Lee, Chi-Woo;Yan, Ran;Colinge, Jean-Pierre;et.al.
(2008) IEEE 2008 Silicon Nanoelectronics Workshop — Location: Honolulu (USA) (15.June.2008)

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Authors
  • Afzalian, AryanUCLouvain
    Author
  • Lederer, DimitriTyndall National Institute, University of Cork
    Author
  • Lee, Chi-WooTyndall National Institute, University of Cork
    Author
  • Yan, RanTyndall National Institute, University of Cork
    Author
  • Colinge, Jean-PierreTyndall National Institute, University of Cork
    Author
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Abstract
The performances of accumulation-mode and inversion-mode Multigate FETs are compared. Both simulation and experimental data are presented. Accumulation-mode devices have a higher current drive and less process variability than inversion-mode FETs.
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Afzalian, A., Lederer, D., Lee, C.-W., Yan, R., Xiong, W., Cleavelin, C. R., & Colinge, J.-P. (2008). MultiGate SOI MOSFETs: Accumulation-Mode vs. Enhancement-Mode. Proceedings of the IEEE 2008 Silicon Nanoelectronics Workshop, p. 1-6. https://hdl.handle.net/2078.5/252620