An investigation on the bonding surface energy versus time in low temperature wafer bonding
(2006) The 8th International Conference on Solid-State and Integrated-Circuit Technology — Location: Shanghai, China (23.October.2006)
Files
No attached file found for this publication.
Details
- Authors
- Abstract
- The procedure of low temperature silicon direct bonding (LTSDB) was investigated by bonding surface energy evolving over annealing time. Two kinds of pretreated approaches, O2-plasma exposure and warm HN03 cleaning, were employed. The dynamic analysis of the bonding surface energy exhibits that the bonding procedure is divided into two phases: (1) rapid reaction between OH groups which leads to a quick enhancement of the bonding strength and (2) slowly further increase of bonding strength and improvement of the bonding uniformity thanks to the out-diffusion of interface voids. As a result of our analysis, we demonstrate that the plasma exposure cannot speed up the diffusion of the bonding byproducts but it increases OH groups on the bonded surfaces.
- Affiliations
Citations
Zhang, X., Olbrechts, B., & Raskin, J.-P. (2006). An investigation on the bonding surface energy versus time in low temperature wafer bonding. Proceedings of the The 8th International Conference on Solid-State and Integrated-Circuit Technology, pp. 484-486. https://doi.org/10.1109/ICSICT.2006.306308