High-Temperature Characterization of Multiple Silicon-Based Substrate for RF-IC Applications
(2022) I E E E Journal of the Electron Devices Society — Vol. 10, n° 1, p. 620-626 (2022)
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- Abstract
- This paper focuses on the comparison of various advanced substrates such as trap-rich (TR), porous silicon (PSi), gold-doped (Au-Si) and smart-implants PN-junction (DP) in terms of RF performances. Both small- and large-signal measurements were performed, including the study of the influence of temperature and DC bias voltage. The purpose of this paper is to provide an overview, and a more in-depth analysis of DP substrate, of the characteristics of these multiple substrates to facilitate design choices for RF-IC applications.
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Citations
Courte, Q., Rack, M., Nabet, M., Cardinael, P., & Raskin, J.-P. (2022). High-Temperature Characterization of Multiple Silicon-Based Substrate for RF-IC Applications. I E E E Journal of the Electron Devices Society, 10(1), 620-626. https://doi.org/10.1109/jeds.2022.3188893 (Original work published 2022)