A Monte Carlo investigation of carrier transport in fabricated back-to-back Schottky diodes: influence of direct quantum tunneling and temperature

Pascual, E.;Rengel, R.;Reckinger, Nicolas;Tang, Xiaohui;Martin, M.J.;et.al.
(2007) 15th International Conference on Nanoequilibrium Carrier Dynamics in Semiconductors (HCTS-15) — Location: Tokyo (Japan) (2007)

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Authors
  • Pascual, E.Universidad de Salamanca
    Author
  • Rengel, R.Universidad de Salamanca
    Author
  • Reckinger, NicolasUCLouvain
    Author
  • Tang, XiaohuiUCLouvain
    Author
  • Bayot, VincentUCLouvain
    Author
  • Martin, M.J.Universidad de Salamanca
    Author
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Abstract
In this paper we present a Monte Carlo investigation of charge transport-including quantum tunnelling effects in fabricated back-to-back n-type Schottky barriers in the reverse bias regime. The effect of the variation of the temperature over the current density and over different internal magnitudes like carrier density, electric field, etc. together with velocity distribution functions and the density of scattering mechanisms has been analyzed. The study of transport in the space charge region evidences important quasi-ballistic characteristics, thus becoming an important issue to be tackled in the modelling of Schottky-based devices with reverse biased junctions.
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Pascual, E., Rengel, R., Reckinger, N., Tang, X., Bayot, V., Dubois, E., & Martin, M. J. (2007). A Monte Carlo investigation of carrier transport in fabricated back-to-back Schottky diodes: influence of direct quantum tunneling and temperature. Physica status solidi, p. 119-122. https://doi.org/10.1002/pssc.200776519