Boosting ION/IOFF Ratio in Ultimate Sub-Decananometer Transistors: The Case of FDSOI Multi-gate MOSFETs and Multi-barrier Enhanced Gate Modulated Resonant Tunneling-FETs
(2011) SBMICRO 2011 — Location: Joao Pessoa (Brésil) (30.August.2011)
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Afzalian, A. (2011). Boosting ION/IOFF Ratio in Ultimate Sub-Decananometer Transistors: The Case of FDSOI Multi-gate MOSFETs and Multi-barrier Enhanced Gate Modulated Resonant Tunneling-FETs. ECS Trans. (SBMICRO 2011), 39. https://hdl.handle.net/2078.5/64219 (Original work published 2011)