Back-gate lumped resistance effect on AC characteristics of FD-SOI MOSFETVanbrabant, Martin;Nyssens, Lucas;Kilchytska, Valeriya;Raskin, Jean-Pierre(2022) International Microwave Symposium - IMS 2022 — Location: Denver, Colorado, USA (12.June.2022)
FilesIMS2022_We1B-1_VanbrabantMartin.pdf Open Access Adobe PDF1.14 MBDownloadDetailsAuthorsVanbrabant, MartinUCLouvainAuthorNyssens, LucasUCLouvainAuthorKilchytska, ValeriyaUCLouvainAuthorRaskin, Jean-PierreUCLouvainAuthorAffiliationsUCLouvainSST/ICTM/ELEN - Pôle en ingénierie électriqueShow moreCitations APA Chicago FWB Vanbrabant, M., Nyssens, L., Kilchytska, V., & Raskin, J.-P. (2022). Back-gate lumped resistance effect on AC characteristics of FD-SOI MOSFET. International Microwave Symposium - IMS 2022, Denver, Colorado, USA. https://hdl.handle.net/2078.5/229477