Erbium Silicide Growth in the Presence of Residual Oxygen
(2011) Journal of the Electrochemical Society — Vol. 158, n° 7, p. H715-H723 (2011)
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- Abstract
- The chemical changes of Ti/Er/n-Si(100) stacks evaporated in high vacuum and grown ex situ by rapid thermal annealing were scrutinized. The emphasis was laid on the evolution with the annealing temperature of (i) the Er-Si solid-state reaction and (ii) the penetration of oxygen into Ti and its subsequent interaction with Er. For that sake, three categories of specimens were analyzed: as-deposited, annealed at 300°C, and annealed at 600°C. It was found that the presence of residual oxygen into the annealing atmosphere resulted in a substantial oxidation of the Er film surface, irrespective of the annealing temperature. However, the part of the Er film in intimate contact with the Si bulk formed a silicide (amorphous at 300°C and crystalline at 600°C) invariably free of oxygen, as testified by x-ray photoelectron spectroscopy depth profiling and Schottky barrier height extraction of 0.3 eV at 600°C. This proves that, even if Er is highly sensitive to oxygen contamination, the formation of low Schottky barrier Er silicide contacts on n-Si is quite robust. Finally, the production of stripped oxygen-free Er silicide was demonstrated after process optimization.
- Affiliations
IEMN/ISEN, UMR CNRS Autre Institute of Electron Technology Autre
Citations
Reckinger, N., Tang, X., Godey, S., Dubois, E., Laszcz, A., Ratajczak, J., Vlad, A., Dutu, C. A., & Raskin, J.-P. (2011). Erbium Silicide Growth in the Presence of Residual Oxygen. Journal of the Electrochemical Society, 158(7), H715-H723. https://doi.org/10.1149/1.3585777 (Original work published 2011)