Temperature-dependence of Excess Carrier Density and Thermopower in Tin-doped Bismuth - Pseudo-parabolic Model

Heremans, J.; Hansen, OP.

doi:10.1088/0022-3719/16/23/022

Temperature-dependence of Excess Carrier Density and Thermopower in Tin-doped Bismuth - Pseudo-parabolic Model

Heremans, J.

;

Hansen, OP.

(1983) Journal of Physics C: Solid State Physics — Vol. 16, n° 23, p. 4623-4636 (1983)

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Heremans, J.
Author
Hansen, OP.
Author

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UCLouvain

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Heremans, J., & Hansen, OP. (1983). Temperature-dependence of Excess Carrier Density and Thermopower in Tin-doped Bismuth - Pseudo-parabolic Model. Journal of Physics C: Solid State Physics, 16(23), 4623-4636. https://doi.org/10.1088/0022-3719/16/23/022 (Original work published 1983)