Resonant tunnelling diodes based on graphene/h-BN heterostructure

Nguyen, Viet-Hung; et al.

doi:10.1088/0022-3727/45/32/325104

Resonant tunnelling diodes based on graphene/h-BN heterostructure

Nguyen, Viet-Hung

;

et al.

(2012) Journal of Physics D: Applied Physics — Vol. 45, n° 32, p. 325104 (2012)

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Nguyen, Viet-HungUCLouvain
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et al.
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Université Paris Sud

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Nguyen, V.-H., & et al. (2012). Resonant tunnelling diodes based on graphene/h-BN heterostructure. Journal of Physics D: Applied Physics, 45(32), 325104. https://doi.org/10.1088/0022-3727/45/32/325104 (Original work published 2012)