Silicon-on-Insulator-Based Technology MOSFET: Prospects For Application to Low Noise RF Integrated Circuits
(1999) 26th General Assembly of the International Union of Radio Science (URSI) — Location: Toronto, Canada (13.August.1999)
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- Abstract
- An exhaustive study of the high frequency four noise parameters of SOI-MOSFET, as function of various gate geometries (length, width, gate resistivity), is proposed. The emphasis is on high frequency noise modeling and measurement of SOI-MOSFET. We show that it is crucial to take into account both gate and drain noise sources in the case of these high performance devices. The high level of MOSFET sensitivity to the minimum noise matching condition is demonstrated. From experimental results, optimization ways to realize ultra low noise amplifiers is discussed.
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Citations
Dambrine, G., Raskin, J.-P., Danneville, F., Vanhoenacker-Janvier, D., Colinge, J.-P., & Cappy, A. (1999). Silicon-on-Insulator-Based Technology MOSFET: Prospects For Application to Low Noise RF Integrated Circuits. Proceedings of the 26th General Assembly of the International Union of Radio Science (URSI), p. 669. https://hdl.handle.net/2078.5/229461