Effect of RF plasma treatment on moving and accumulation charge in SiO2 layers of Al-polySi-SiO2-Si structures

Nazarov, Alexei; Lysenko, V.S; Mikhailov, S.N.; Tkachenko, A.S.; Pavluk, M.I.; Molostov, A.N.; Kilchytska, Valeriya

Effect of RF plasma treatment on moving and accumulation charge in SiO2 layers of Al-polySi-SiO2-Si structures

Nazarov, Alexei

;

Lysenko, V.S

;

Mikhailov, S.N.

;

Tkachenko, A.S.

;

Kilchytska, Valeriya

;et.al.

(1994) Mikroelectronika — Vol. 23, n° 3, p. 39-46 (1994)

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Nazarov, AlexeiNational Academy of Sciences of Ukraine
Author
Lysenko, V.SLashkarov Institute of Semiconductor Physics, Ukraine
Author
Mikhailov, S.N.Lashkarov Institute of Semiconductor Physics, Ukraine
Author
Tkachenko, A.S.Lashkarov Institute of Semiconductor Physics, Ukraine
Author
Kilchytska, ValeriyaUCLouvain
Author

Affiliations

UCLouvainFSA/ELEC - Département d'électricité

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Nazarov, A., Lysenko, V. S., Mikhailov, S. N., Tkachenko, A. S., Pavluk, M. I., Molostov, A. N., & Kilchytska, V. (1994). Effect of RF plasma treatment on moving and accumulation charge in SiO2 layers of Al-polySi-SiO2-Si structures. Mikroelectronika, 23(3), 39-46. https://hdl.handle.net/2078.5/53539 (Original work published 1994)