3DCIRCUIT MODEL FOR TSV COUPLING INCLUDING ANOMALOUS CV
(2015) Partner Technical Week 2015 — Location: imec, Leuven, Belgium (19.October.2015)
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- Abstract
- The enabling technology towards 3D integration is the TSV, offering the potential to significantly boost the performance and capabilities of state-of-art ICs, while supporting the integration of heterogeneous technologies. TSVs are however large and noisy structures capable of interfering significantly with the operation of neighboring devices and circuits. For this reason the evaluation of electromagnetic (EM) coupling to and from TSVs has become crucial to the design of 3D-ICs. Therefore a fast and accurate model, that can take into account substrate effects (such as crosstalk and losses), capable of simulating large 3D structures with multiple nodes and ports is essential for reliable 3D-IC design. In this work, we present our “3D circuit model” that fulfills all of the above requirements towards 3D-IC modelling. The model has already proven its validity against wideband S-parameter measurements of RF TSV test vehicles, and in this work it is extended to include ‘anomalous’ parasitic effects caused by an induced inversion layer at the back side (BS) due to fixed charges in the passivation layer.
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Citations
Rack, M., & Raskin, J.-P. (2015). 3DCIRCUIT MODEL FOR TSV COUPLING INCLUDING ANOMALOUS CV. Partner Technical Week 2015, imec, Leuven, Belgium. https://hdl.handle.net/2078.5/189617