Compact On-Wafer Test Structures for Device RF Characterization
(2017) IEEE Transactions on Electron Devices — Vol. 64, n° 8, p. 3101-3107 (2017)
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- Abstract
- The main objective of this paper is to validate the radio frequency (RF) characterization procedure based on compact test structures compatible with 50-μm-pitch RF probes. It is shown that by using these new test structures, the layoutgeometry and hence the on-chip space consumption for complete sets of passive and active devices, e.g., coplanar waveguide transmission lines and RF MOSFETs, is divided by a factor of two. The validity domain of these new compact test structures is demonstrated by comparing their measurement results with classical test structures compatible with 100–150 μm-pitch RF probes. 50-μm-pitch de-embedding structures have been implemented on 0.18-μm RF silicon-on-insulator (SOI) technology. Cutoff frequencies and parasitic elements of the RF SOI transistors are extracted and the RF performance of traprich SOI substrates is analyzed under small- and largesignal conditions.
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Citations
Kazemi Esfeh, B., Ben Ali, K., & Raskin, J.-P. (2017). Compact On-Wafer Test Structures for Device RF Characterization. IEEE Transactions on Electron Devices, 64(8), 3101-3107. https://doi.org/10.1109/TED.2017.2717196 (Original work published 2017)