Direct extraction techniques of technological parameters and microwave small-signal model for sub-quarter micron SOI MOSFET’s

Goffioul, Michael;Vanhoenacker-Janvier, Danielle;Raskin, Jean-Pierre
(2000) 5th Symposium Diagnostics and Yield, SOI – materials, devices and characterization — Location: Warsaw, Poland (28.June.2000)

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  • Goffioul, MichaelUCLouvain
    Author
  • Vanhoenacker-Janvier, DanielleUCLouvain
    Author
  • Raskin, Jean-PierreUCLouvain
    Author
Abstract
Original extraction techniques of microwave small-signal model and technological parameters for SOI MOSFETs are presented. The characterization method combines careful design of probing and calibration structures, rigorous in situ calibration and a powerful direct extraction method. The proposed characterization procedure is directly based on the physical meaning of each small-signal model element. Knowing the qualitative small-signal behavior of each model parameter versus bias conditions, the high frequency equivalent circuit can be simplified for extraction purposes. Biasing MOSFETs under depletion, strong inversion and saturation conditions, certain technological parameters and microwave small-signal elements can be extracted directly from the measured S-parameters. These new extraction techniques allow us to understand deeply the behavior of the sub-quarter micron SOI MOSFETs in microwave domain and to control their fabrication process.
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Goffioul, M., Vanhoenacker-Janvier, D., & Raskin, J.-P. (2000). Direct extraction techniques of technological parameters and microwave small-signal model for sub-quarter micron SOI MOSFET’s. Proceedings of the 5th Symposium Diagnostics and Yield, SOI – materials, devices and characterization, p. 8 pages. https://hdl.handle.net/2078.5/229554