Deep-submicron drain current to radio frequency silicon on insulator metal oxide semiconductor field-effect transistor macromodel for designing microwave circuits

Iniguez, B.;Raskin, Jean-Pierre
(2002) International Journal of R F and Microwave Computer-Aided Engineering — Vol. 12, n° 5, p. 428-438 (2002)

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Abstract
A submicron radio frequency (RF) fully depleted silicon on insulator (SOI) metal oxide semiconductor field-effect transistor (MOSFET) macromodel based on a complete extrinsic small-signal equivalent circuit and an improved computer-aided design model for the intrinsic device is presented. Because the intrinsic device model is charge based, our RF SOI MOSFET model can be used in both small-and large-signal analyses. The present analytical model is used for successfully designing microwave oscillators at 5.8 and 12 GHz in deep-submicron SOI complementary metal oxide semiconductor technology. (C) 2002 Wiley Periodicals, Inc.
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Iniguez, B., & Raskin, J.-P. (2002). Deep-submicron drain current to radio frequency silicon on insulator metal oxide semiconductor field-effect transistor macromodel for designing microwave circuits. International Journal of R F and Microwave Computer-Aided Engineering, 12(5), 428-438. https://doi.org/10.1002/mmce.10045 (Original work published 2002)