Contactless monitoring of Si substrate permittivity and resistivity from microwave to millimeter-wave frequencies
(2010) Microwave & Optical Technology Letters — Vol. 52, n° 11, p. 2500-2505 (2010)
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- Abstract
- A contactless and nondestructive technique is employed for characterizing single-sided metallised silicon wafers. The reflection spectra are measured using a quasi-optical millmeter-wave setup in the frequency range 40–320 GHz. The results are compared with those provided by the coplanar waveguide method, in terms of accuracy and range of applicability
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Citations
Elhawil, A., Roda Neve, C., Olbrechts, B., Huynen, I., Raskin, J.-P., Poesen, G., Zhang, L., Stiens, J., & Vounckx, R. (2010). Contactless monitoring of Si substrate permittivity and resistivity from microwave to millimeter-wave frequencies. Microwave & Optical Technology Letters, 52(11), 2500-2505. https://doi.org/10.1002/mop.25524 (Original work published 2010)