Analysis and design of p-i-n travelling wave photodetectors for high power and wide-bandwidth applications
(2001) 6th Annual Meeting of the IEEE/LEOS Benelux Chapter — Location: Brussels, Belgium (3.December.2001)
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- Abstract
- Traveling-wave photodiodes, achieving a larger bandwidth-efficiency product than classical vertically illuminated photodetectors, are the key elements for ultra-wide bandwidth optical links. They can absorb high power levels, allowing to design wide dynamic range systems. In this paper, both the velocity mismatch and electrical signal reflections at both input and output device ends are investigated. Design criteria for long absorption length photodiodes, taking into account transit-time limit and microwave losses, are derived. As broadband applications require a thin intrinsic region, while wide absorbing surface are needed to reduce insertion losses, a trade-off between bandwidth and coupling efficiency has to be reached.
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Citations
Torrese, G., Huynen, I., Raskin, J.-P., & Vander Vorst, A. (2001). Analysis and design of p-i-n travelling wave photodetectors for high power and wide-bandwidth applications. Proceedings of the 6th Annual Meeting of the IEEE/LEOS Benelux Chapter, pp. 93-96. https://hdl.handle.net/2078.5/230321