Bimodal Spin Switch Emerging from Hybridized 2D MoS2/Ferromagnet Interfaces

Hao Wei;Dubois, Simon;Frederic Brunnett;Florian Godel;Bruno Dlubak;et.al.
(2025) Bimodal Spin Switch Emerging from Hybridized 2D MoS2/Ferromagnet Interfaces — Vol. 2506140, p. 1-12 (2025)

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Authors
  • Hao WeiLaboratoire Albert Fert CNRS Thales Université Paris-Saclay Palaiseau 91767, France
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  • Dubois, Simonorcid-logoUCLouvain
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  • Frederic BrunnettLaboratoire Albert Fert CNRS Thales Université Paris-Saclay Palaiseau 91767, France
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  • Florian GodelLaboratoire Albert Fert CNRS Thales Université Paris-Saclay Palaiseau 91767, France
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  • Bruno DlubakLaboratoire Albert Fert CNRS Thales Université Paris-Saclay Palaiseau 91767, France
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Abstract
Over the past decade, MRAMs developments have focused on improving magnetic tunnel junctions while using magnetic electrodes with fixed properties as spin sources. Interestingly, 2D semiconductors offer interface tailoring opportunities for spin valve devices, with many atomically thin materials now available. However, integrating them with oxidation-prone spintronics materials remains a challenge. Here, spin devices are fabricated and evaluated with large-scale MoS2 directly grown on a monocrystallineferromagnetic spin source. While most spin transport experiments with 2D semiconductors focus on their isolated dielectric properties, the presented approach unlocks an additional spin manipulation opportunity from MoS2 hybridization with ferromagnetic electrodes. The experimental results show a substantial tunnel magnetoresistance (TMR) value of over 65%, an order of magnitude higher than previously observed for exfoliated 2D semiconductor-based devices. A non-monotonic dependence of the spin signal on the applied bias, including a sign reversal, is also uncovered, which is attributed to the modulation of the MoS2 band structure by the ferromagnetic electrode. Ab initio calculations support these findings by illustrating how the MoS2 band structure evolves upon hybridization, introducing a pronounced exchange-induced spin splitting and resulting in an unusual bimodal spin response. This study demonstrates the unique spin manipulation opportunities offered by 2D semiconductors unlocked by direct integration.
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Citations

Hao Wei, Dubois, S., Frederic Brunnett, Florian Godel, Cécile Carrétéro, Federico Panciera, Guillemin Rodary, Sophie Collin, Jane Daniel, Etienne Carré, Julian Peiro, Gilles Patriarche, Dominique Carisetti, Frédéric Petroff, Charlier, J.-C., Marie-Blandine Martin, Pierre Seneor, & Bruno Dlubak. (2025). Bimodal Spin Switch Emerging from Hybridized 2D MoS2/Ferromagnet Interfaces. Bimodal Spin Switch Emerging from Hybridized 2D MoS2/Ferromagnet Interfaces, 2506140, 1-12. https://doi.org/10.1002/adma.202506140 (Original work published 2025)