3D Simulation of RTS Amplitude in Accumulation-Mode and Inversion-Mode Trigate SOI MOSFETs

Yan, Ran;Cullen, Ailbhe;Afzalian, Aryan;Ferain, Isabelle;Colinge, Jean-Pierre;et.al.
(2010) 2010 EUROSOI Conference — Location: Grenoble (France) (25.January.2010)

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Authors
  • Yan, RanTyndall National Institute, University of Cork
    Author
  • Cullen, AilbheTrinity College Dublin (Ireland)
    Author
  • Afzalian, AryanUCLouvain
    Author
  • Ferain, IsabelleTyndall National Institute, University of Cork
    Author
  • Colinge, Jean-PierreTyndall National Institute, University of Cork
    Author
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Abstract
The amplitude of random telegraph signal (RTS) is studied in Accumulation-mode (AM) and Inversion-mode (IM) Trigate SOI MOSFETs using numerical simulations. The presence of a single trapped electron at the Si/SiO2 interface decreases the drain current (ΙD). The impact of RTS on electrical parameters varies with the channel polarity and the physical location of the trapped electron.
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Yan, R., Cullen, A., Afzalian, A., Ferain, I., Lee, C.-W., Dehdashti, N., Razavi, P., & Colinge, J.-P. (2010). 3D Simulation of RTS Amplitude in Accumulation-Mode and Inversion-Mode Trigate SOI MOSFETs. Proceedings of the 2010 EUROSOI Conference, 2 pages. https://hdl.handle.net/2078.5/252971