Evaluation of monolithic pixel detector readout in silicon-on-insulator technology
(2015)
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- Abstract
- Silicon particle detectors are found at the forefront of scientific imaging applications. From medical imaging machines that scan the human body to space telescopes observing phenomena lightyears away, silicon detectors are used in the most demanding of situations. High Energy Physics experiments, such as the ones running at CERN, use silicon pixel detectors at their core to image subatomic particles in order to probe the fundamentals of physics. Current state of the art tracker detectors are hybrid detectors which satisfy challenging resolution, material budget and radiation hardness requirements. The term hybrid refers to the fact that the sensor and readout electronics are fabricated separately and subsequently bonded together. The TRAPPISTe detector developed at the Université catholique de Louvain is a monolithic pixel detector developed in Silicon-on-Insulator (SOI) technology. As a monolithic detector, the sensor and readout electronics are fabricated on the same wafer providing potential benefits of increased resolution and lower material budget compared to hybrid detectors. The first proof of concept TRAPPISTe devices have been built and tested. A charge sensitive amplifier has been monolithically integrated into a matrix with 150um x 150um pixels. The amplifiers are able to detect 1 MIP of induced charge and the matrix is able to track the position of a laser source. These first devices show the potential of using monolithic SOI detectors in high energy physics and other applications while at the same time highlighting the technical challenges to be dealt with such as the backgate effect and radiation hardness.
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Citations
Soung Yee, L. (2015). Evaluation of monolithic pixel detector readout in silicon-on-insulator technology. https://hdl.handle.net/2078.5/191287