Analysis of Bandwidth and Nonlinear Effects in InAlAs/InGaAs/InP Based Ballistic Nanodevices for Applications up to THz Range

Rashmi;Bednarz, Lukasz;Gence, Loïk;Hackens, Benoît;Huynen, Isabelle;et.al.
(2005) International Journal of Nanoscience — Vol. 4, n° 5-6, p. 1033-1038 (2005)

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Abstract
Analysis of nonlinear effects in InAlAs/InGaAs-based channels and three-terminal ballistic junctions (TBJs) is performed for applications up to THz range. Results show that InGaAs-based channels designed for ballistic operation exhibit high intrinsic cut-off frequency (fT ~ 10 THz). Nonlinear effects in TBJs, which result from device geometry and space charge distribution, show good qualitative agreement with published results.
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Rashmi, Bednarz, L., Gence, L., Hackens, B., Boutry, H., Bayot, V., & Huynen, I. (2005). Analysis of Bandwidth and Nonlinear Effects in InAlAs/InGaAs/InP Based Ballistic Nanodevices for Applications up to THz Range. International Journal of Nanoscience, 4(5-6), 1033-1038. https://doi.org/10.1142/S0219581X05004030 (Original work published 2005)