Comparison of different surface orientation in narrow fin MuGFETs
(2009) Microelectronic Engineering — Vol. 86, p. 2381-2384 (2009)
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- Abstract
- Device performance characteristics are investigated for different surface orientation and doping concentration on accumulation-mode p-type and inversion-mode n-type MuGFETs. Short-channel effects and drain breakdown voltage are better is carrier transport is in the (1 0 0) direction than in the (1 1 0) direction. This is due to the larger Si/SiO2 interface roughness, the higher density of interface state at (1 1 0) surfaces, and to the difference of effective mass. The mobility in PMOS devices, however, is much higher in the (1 1 0) direction than that in the (1 0 0) direction. For better performance of device, our results show that optimized fin orientation can improve device stability and performance.
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Citations
Lee, C.-W., Afzalian, A., Ferain, I., Yan, R., Dehdashti, N., Byun, K.-Y., Colinge, C., Xiong, W., & Colinge, J.-P. (2009). Comparison of different surface orientation in narrow fin MuGFETs. Microelectronic Engineering, 86, 2381-2384. https://doi.org/10.1016/j.mee.2009.04.025 (Original work published 2009)