Evidence for superconductive microsegregations in tin-doped bismuth

Heremans, J.;Boxus, J.;Issi, J.-P.
(1979) Physical Review. B, Condensed Matter — Vol. 19, n° 7, p. 3476-3481 (1979)

Files

No attached file found for this publication.

Details

Authors
  • Heremans, J.
    Author
  • Boxus, J.
    Author
  • Issi, J.-P.
    Author
Abstract
Results on the resistivity drop around 3.7K, observed in pulled tin-doped (0.004- to 0.3-at.% Sn) bismuth single crystals, are reported. The drop is ascribed to the superconductive transition of segregated metallic tin in the /b p/-type bismuth matrix. This is confirmed by the behavior observed in a magnetic field. It is suggested that these segregations, which could not be detected by classical methods of analysis, should be taken into account in interpreting the electronic properties and the scattering mechanisms in tin-doped bismuth.
Affiliations

Citations

Heremans, J., Boxus, J., & Issi, J.-P. (1979). Evidence for superconductive microsegregations in tin-doped bismuth. Physical Review. B, Condensed Matter, 19(7), 3476-3481. https://hdl.handle.net/2078.5/49754 (Original work published 1979)