Role of finite layer thickness in spin polarization of GaAs two-dimensional electrons in strong parallel magnetic fields.
(2003) Physical Review B, Condensed matter and materials physics — Vol. 67, p. 241309 (2003)
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- Abstract
- We report measurements and calculations of the spin polarization, induced by a parallel magnetic field, of interacting, dilute, two-dimensional electron systems confined to GaAs/AlGaAs heterostructures. The results reveal the crucial role the non-zero electron layer thickness plays: it causes a deformation of the energy surface in the presence of a parallel field, leading to enhanced values for the effective mass and g factor, and a nonlinear spin polarization with field.
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Citations
Tutuc, E., Melinte, S., De Poortere, E. P., & Winkler, R. (2003). Role of finite layer thickness in spin polarization of GaAs two-dimensional electrons in strong parallel magnetic fields. Physical Review B, Condensed matter and materials physics, 67, 241309. https://doi.org/10.1103/PhysRevB.67.241309 (Original work published 2003)