(en) Organic electronics is a research field that deals with electronic devices which components are partially or entirely made of organic materials. The key attributes of the organic-based technology (flexibility, low-temperature processing, large area) allow its compatibility with very different substrates (Si, glass, plastic, paper) leading to auspicious applications, some of which are already in commercial production. Taking into account the low cost of the raw organic materials, the price of the end products is mostly influenced by the fabrication and packing expenses. Consequently, the financial success of this technology depends on the ability of the organic electronics community to capture its low cost potential through innovative fabrication approaches on inexpensive, large area substrates. In the light of today’s research trend, this thesis is focused on the manufacturing, characterization and optimization of organic thin film transistors (OTFTs), as they are a versatile tool for testing novel materials and unconventional fabrication techniques. Specifically, the main objective of our work was to take a step forward towards the fabrication of all-printed OTFTs, through the employment of solution-processable materials. Hence, patterning of the source-drain contacts and of the active layer has been fulfilled by making use of two soft-lithographic methods, respectively: micro molding in capillaries and lithographically controlled wetting. A good solubility in common solvents being one of the requisites from the organic semiconductors, the research community has invested large efforts in this direction for polyacene materials such as the pentacene. The 6,13-bis(triisopropylsilylethynyl)-pentacene (TIPS-PEN) answers this demand and, moreover, packs into two-dimensional brick-wall assemblies that enable strong electronic coupling between the molecules. In this context, we investigated the TIPS-PEN films defined by zone-casting in combination with several TFT architectures, dielectrics and contacts surface coatings. Our efforts lead to state-of-the-art performance enabled by the large, single-crystalline TIPS-PEN ribbons. Another research direction was taken by fabricating very thin (~8 nm) silicon oxynitride gate dielectrics for oligothiophene-based TFTs. A study of their analog potential uncovered some auspicious ascertainments for further building of basic analog blocks like amplifiers and differential amplifiers with p-type OTFTs.