On the origin of damped electrochemical oscillations at silicon anodes (revisited)

Proost, Joris; Blaffart, Frédéric; Turner, S.; Idrissi, Hosni

doi:10.1002/cphc.201402207

On the origin of damped electrochemical oscillations at silicon anodes (revisited)

Proost, Joris

;

Blaffart, Frédéric

;

Turner, S.

;

Idrissi, Hosni

(2014) ChemPhysChem : a European journal of chemical physics and physical chemistry — Vol. 15, n° 14, p. 3166-3124 (2014)

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Authors

Proost, JorisUCLouvain
Author
Blaffart, FrédéricUCLouvain
Author
Turner, S.University of Antwerp
Author
Idrissi, HosniUCLouvain
Author

Abstract

accepted

Affiliations

UCLouvainSST/IMMC/IMAP - Materials and process engineering

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Proost, J., Blaffart, F., Turner, S., & Idrissi, H. (2014). On the origin of damped electrochemical oscillations at silicon anodes (revisited). ChemPhysChem : a European journal of chemical physics and physical chemistry, 15(14), 3166-3124. https://doi.org/10.1002/cphc.201402207 (Original work published 2014)