Design criteria for increasing the bandwidth-efficiency product of GaAs p-i-n photodetectors

Torrese, G.;Huynen, Isabelle;Vander Vorst, André
(2001) Microwave & Optical Technology Letters — Vol. 29, n° 3, p. 150-155 (2001)

Files

pdfdocument.pdf
  • Restricted Access
  • Adobe PDF
  • 196 KB
Request a copy

Details

Authors
  • Torrese, G.
    Author
  • Huynen, IsabelleUCLouvain
    Author
  • Vander Vorst, AndréUCLouvain
    Author
Abstract
Using commercial and homemade simulation tools, this letter investigates how the geometrical and technological parameters of the p-i-n junction, particularly the p/sup +/- and n/sup +/-regions, influence the electrical and optical performances of GaAs p-i-n lumped and traveling-wave photodetectors (TWPDs). It is concluded that, for TWPDs, the electrical bandwidth and quantum efficiency can be optimized nearly separately as a function of the parameters of the p-, i-, and n-regions.
Affiliations

Citations

  • APA
  • Chicago
  • FWB

Torrese, G., Huynen, I., & Vander Vorst, A. (2001). Design criteria for increasing the bandwidth-efficiency product of GaAs p-i-n photodetectors. Microwave & Optical Technology Letters, 29(3), 150-155. https://doi.org/10.1002/mop.1113 (Original work published 2001)