TEM Characterization of Polysilicon and Silicide Fin Fabrication Processes of FinFETs
(2009) 3rd National Conference on Nanotechnology — Location: Warsaw(Poland) (22.June.2009)
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- Abstract
- The transmission electron microscopy characterization of various silicon and silicide fin structures intended for application in FinFET devices has been performed. The results showed that transmission electron microscopy is a very useful tool for optimization of manufacturing processes of fin nanostructures in FinFETs.
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Ratajczak, J., Laszcz, A., Czerwinski, A., Katcki, J., Tang, X., Reckinger, N., Yarekha, D. A., Larrieu, G., & Dubois, E. (2009). TEM Characterization of Polysilicon and Silicide Fin Fabrication Processes of FinFETs. Acta Physica Polonica. Series A: General Physics, Physics of Condensed Matter, Optics and Quantum Electronics, Atomic and Molecular Physics, Applied Physics, 116, S89-S91. https://hdl.handle.net/2078.5/47359 (Original work published 2009)