Threshold Voltages of Short-channel Dual-gate Mos-transistorsBarsan, RM.(1982) Revue Roumaine de Physique — Vol. 27, n° 2, p. 191-209 (1982)
FilesNo attached file found for this publication.DetailsAuthorsBarsan, RM.AuthorAffiliationsUCLouvainShow moreCitations APA Chicago FWB Barsan, RM. (1982). Threshold Voltages of Short-channel Dual-gate Mos-transistors. Revue Roumaine de Physique, 27(2), 191-209. https://hdl.handle.net/2078.5/70116 (Original work published 1982)