Effect of temperature on advanced Si-based substrates performance for RF passive integration
(2014) Microelectronic Engineering — Vol. 120, p. 205-209 (2014)
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- Abstract
- This paper analyses RF substrate losses and non-linearity on Si-based substrates. Through measurements it is shown that trap-rich high resistivity silicon and porous silicon substrates are virtually lossless up to 120 °C. Although, RF losses and CPW attenuation increases with temperature on both Si-based solutions, they remain acceptable for high temperature RF applications. Porous locally grown silicon shows better linearity than a comparable trap-rich high-resistivity (HR) Si substrate up to 175°C. Both Si-based solutions are considered as promising substrates for RF integration and system-on-chip applications. © 2013 Elsevier B.V. All rights reserved.
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Roda Neve, C., Ben Ali, K., Sarafis, P., Hourdakis, E., Nassiopoulou, A. G., & Raskin, J.-P. (2014). Effect of temperature on advanced Si-based substrates performance for RF passive integration. Microelectronic Engineering, 120, 205-209. https://doi.org/10.1016/j.mee.2013.08.004 (Original work published 2014)