Direct extraction of the series equivalent circuit parameters for the small-signal model of SOI MOSFET's
(1997) IEEE Microwave and Guided Wave Letters — Vol. 7, n° 12, p. 408-410 (1997)
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- Abstract
- A new extraction scheme is proposed which allows to determine all the series equivalent circuit elements values from S-parameters measurements at a single bias point in saturation, Exploiting the specific shape of a set of impedance loci, the new scheme uses linear regression techniques to solve the extraction problem, The resulting algorithm is very simple and efficient when compared to optimizer-driven approaches.
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Citations
Raskin, J.-P., Dambrine, G., & Gillon, R. (1997). Direct extraction of the series equivalent circuit parameters for the small-signal model of SOI MOSFET’s. IEEE Microwave and Guided Wave Letters, 7(12), 408-410. https://doi.org/10.1109/75.645191 (Original work published 1997)