RF MEMS passives on high-resistivity silicon substrates
(2013) IEEE Microwave and Wireless Components Letters — Vol. 23, n° 12, p. 632-634 (2013)
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- Abstract
- Diverse RF passive devices and microelectro- mechanical systems (MEMS) can be monolithically integrated on a high-resistivity silicon (HR-Si) substrate. However, parasitic surface conduction (PSC) at the interface of HR-Si and a silicon dioxide (SiO<inf>2</inf>)passivation layer reduces the effective substrate resistivity, which in turn results in deterioration of the device quality factor (Q) and non-linearity. Trap-rich HR-Si has been proposed as a low substrate loss alternative, eliminating the problems associated with PSC. However, the full potential of trap-rich HR-Si as a common platform for implementing MEMS passives is not fully explored. In this letter, we evaluate the effectiveness of the trap-rich layer by comparing the frequency response of a number of RF passive devices fabricated on standard and trap-rich HR-Si substrates. In addition, we suggest an electromagnetic (EM) simulation setup that can be used to efficiently and accurately simulate the device performance. © 2013 IEEE.
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Shim, T., Raskin, J.-P., Neve, C. R., & Rais-Zadeh, M. (2013). RF MEMS passives on high-resistivity silicon substrates. IEEE Microwave and Wireless Components Letters, 23(12), 632-634. https://doi.org/10.1109/LMWC.2013.2283857 (Original work published 2013)