Control of mesoporous silicon initiation by cathodic passivation

Blaffart, Frédéric;Boucherif, Abderraouf;Aimez, Vincent;Arès, Richard
(2013) Electrochemistry Communications — Vol. 36, p. 84-87 (2013)

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  • Blaffart, FrédéricUCLouvain
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  • Boucherif, Abderraouf
    Author
  • Aimez, Vincent
    Author
  • Arès, Richard
    Author
Abstract
We demonstrate that cathodic polarization is an effective method for in-situ control of surface morphology in the fabrication of mesoporous silicon. The cathodic currents are applied on the silicon electrode before or during the anodic formation of mesoporous silicon. On the surface, the formation of a parasitic microporous layer is avoided, the pores diameter can be increased from 5 to 32 nm, and the pore density can be decreased from 1900 to 600 μm <sup>- 2</sup>. A simple growth model is proposed to explain the surface morphology evolution based on the hydrogen passivation of the silicon surfaces in the cathodic regime. © 2013 Elsevier B.V.
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Blaffart, F., Boucherif, A., Aimez, V., & Arès, R. (2013). Control of mesoporous silicon initiation by cathodic passivation. Electrochemistry Communications, 36, 84-87. https://doi.org/10.1016/j.elecom.2013.09.015 (Original work published 2013)