Electronic structure of semiconductor nanowires
(2006) Physical Review B - Condensed Matter and Materials Physics — Vol. 73, n° 16, p. 165319 (13 pages) (2006)
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- Abstract
- We compute the subband structure of several group IV and III-V 001 -, 110 -, and 111 -oriented nanowires using sp3 and sp3d5s* tight-binding models. In particular, we provide the band gap energy of the nanowires as a function of their radius R in the range R=1-20 nm. We then discuss the self-energy corrections to the tight-binding subband structure, that arise from the dielectric mismatch between the nanowires (with dielectric constant εin) and their environment (with dielectric constant εout). These self-energy corrections substantially open the band gap of the nanowires when εin > εout, and decrease slower (1/R) than quantum confinement with increasing R. They are thus far from negligible in most experimental setups. We introduce a semi-analytical model for practical use. This semianalytical model is found in very good agreement with tight-binding calculations when εin > εout. © 2006 The American Physical Society.
- Affiliations
CEA Grenoble Département de Recherche Fondamentale sur la Matière Condensée
Citations
Niquet, Y. M., Lherbier, A., Quang, N. H., Fernández-Serra, M. V., Blase, X., & Delerue, C. (2006). Electronic structure of semiconductor nanowires. Physical Review B - Condensed Matter and Materials Physics, 73(16), 165319 (13 pages). https://doi.org/10.1103/PhysRevB.73.165319 (Original work published 2006)