Direct silicon bonding dynamics: A coupled fluid/structure analysis
(2013) Applied Physics Letters — Vol. 103, n° 3, p. 34104 (2013)
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- Abstract
- During direct bonding, a thin gas film is trapped in-between the two wafers, leading to an interactive fluid/structure dynamics. A model of bonding dynamics is formulated using the plate approximation, Reynolds equation, and adhesion forces as the boundary condition at the bonding front. The transient equation is solved numerically in a one dimensional cylindrical case. The entire process, including initiation and propagation of the front, is modelled. The model is supported by experimental data from an original setup involving non-contact optical sensors to measure the vertical movement of the wafer during the bonding sequence.
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Citations
Navarro, E., Bréchet, Y., Moreau, R., Pardoen, T., Raskin, J.-P., Barthelemy, A., & Radu, I. (2013). Direct silicon bonding dynamics: A coupled fluid/structure analysis. Applied Physics Letters, 103(3), 34104. https://doi.org/10.1063/1.4813312 (Original work published 2013)