Impact of channel doping on Schottky barrier height and investigation on p-SB MOSFETs performance

Larrieu, Guilhem;Dubois, Emmanuel;Yarekha, Dmytro;Breil, Nicolas;Laszcz, Adam;et.al.
(2008) Symposium on Front-End Junction and Contact Formation in Future Silicon/Germanium based Devices held at the 2008 E-MRS Spring Meeting — Location: Strasbourg (France) (26.May.2008)

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Authors
  • Larrieu, Guilhem
    Author
  • Dubois, EmmanuelUCLouvain
    Author
  • Yarekha, Dmytro
    Author
  • Breil, Nicolas
    Author
  • Reckinger, NicolasUCLouvain
    Author
  • Tang, XiaohuiUCLouvain
    Author
  • Laszcz, Adam
    Author
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Abstract
This paper proposes to study the impact of a moderate variation of the channel doping level on the electrical performance of p-type Schottky-barrier (SB) MOSFETs. First, it has been found that a moderate increase of the acceptors doping level leads to a reduction of the Schottky-barrier height (SBH) but does not affect the silicide reaction. In the case of PtSi, the SBH on p-type silicon at 5 x 10(15) cm(-3) is 0.15 eV whereas an increase of the doping level by two decades decreases the barrier by 60 meV. The integration of PtSi MOSFETs on moderately doped channel (5 x 10(17) cm(-3)) Was successfully achieved, demonstrating an overall 60% improvement in current drive at L-g = 100 nm. This enhanced performance is attributed to the barrier height reduction related to the beneficial band bending induced by p-type dopants. The considered doping levels are still in a sufficiently low range not to affect the carrier mobility in the channel. A complete study, including comparison of I-on, I-off, immunity against short channel effects (Swing and DIBL), is presented. (C) 2008 Elsevier B.V. All rights reserved.
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Larrieu, G., Dubois, E., Yarekha, D., Breil, N., Reckinger, N., Tang, X., Ratajczak, J., & Laszcz, A. (2008). Impact of channel doping on Schottky barrier height and investigation on p-SB MOSFETs performance. Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 154, 159-162. https://doi.org/10.1016/j.mseb.2008.10.014 (Original work published 2008)