Non-Linear analysis of n-type Schottky-Barrier MOSFETs

Tinoco, J.C.;Urban, C.;Emam, Mostafa;Mantl, S.;Raskin, Jean-Pierre;et.al.
(2010) 2010 IEEE International SOI Conference — Location: San Diego, CA, USA (11.October.2010)

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Abstract
In the last few years, many efforts have been made looking for the improvement of the DC and RF performance of MOS transistors. In this scope, Schottky-Barrier transistors appear as very interesting alternative to conventional devices. In this paper we present the non-linear behavior of dopant segregated n-type SB-MOSFETs with 180 nm channel length.
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Tinoco, J. C., Urban, C., Emam, M., Mantl, S., Zhao, Q. T., & Raskin, J.-P. (2010). Non-Linear analysis of n-type Schottky-Barrier MOSFETs. Proceedings of the 2010 IEEE International SOI Conference, pp. 76-77. https://hdl.handle.net/2078.5/231077