Assessment of RF compact modelling of FD SOI transistors
(2021) 2021 IEEE Latin America Electron Devices Conference (LAEDC) — Location: Mexico, Mexico (19.April.2021)
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- Abstract
- In this work, the compact model for FD SOI transistors and its limitations are assessed by comparing Spectre simulations to experimental measurements in a wide range of frequencies the impact of two phenomena, namely self-heating (SH) and substrate effect (SE), on the frequency response of output conductance and capacitance and their respective modelling are studied. This work shows that the present version of compact model is not sufficient to accurately model the experimentally observed transitions in the output conductance and capacitance frequency response related to these two phenomena.
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Vanbrabant, M., Nyssens, L., Kilchytska, V., & Raskin, J.-P. (2021). Assessment of RF compact modelling of FD SOI transistors. IEEE Latin America Electron Devices Conference. Published. 2021 IEEE Latin America Electron Devices Conference (LAEDC), Mexico, Mexico. https://doi.org/10.1109/laedc51812.2021.9437955 (Original work published 2021)