Variable-Barrier Tunneling SOI Transistor (VBT)

Afzalian, Aryan;Dehdashti, Nima;Ferain, Isabelle;Lee, Chi-Woo;Colinge, Jean-Pierre;et.al.
(2009) 2009 IEEE International SOI Conference — Location: Foster City (USA) (4.October.2009)

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Authors
  • Afzalian, AryanUCLouvain
    Author
  • Dehdashti, NimaTyndall National Institute, University of Cork
    Author
  • Ferain, IsabelleTyndall National Institute, University of Cork
    Author
  • Lee, Chi-WooTyndall National Institute, University of Cork
    Author
  • Colinge, Jean-PierreTyndall National Institute, University of Cork
    Author
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Abstract
In this paper, we report the possibility of achieving sub-kT/q subthreshold slope (i.e. lower than 59.6 mV/decade at T=300K) without using either impact ionization or band-to-band tunneling. The device uses intraband tunneling within the conduction band through barriers whose shape varies with the applied gate voltage. Subthreshold slope as low as 56.5 mV/decade is reported at T=300K. The VBT reported here breaks the 60mV/dec barrier over more than five decades of subthreshold current, which is the highest current range reported so far.
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Afzalian, A., Dehdashti, N., Ferain, I., Lee, C.-W., Yan, R., Razavi, P., & Colinge, J.-P. (2009). Variable-Barrier Tunneling SOI Transistor (VBT). Proceedings of the 2009 IEEE International SOI Conference, p. 2 pages. https://hdl.handle.net/2078.5/252778