SEGR Study on Power MOSFETs: Multiple Impacts Assumption
(2008) 9th European Conference Radiation and Its Effects on Components and Systems — Location: Deauville(France) (10.September.2007)
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- Abstract
- This paper presents experimental data showing heavy ions inducing gate degradation in power MOSFETs. In the experiments, backside and front-side irradiations are performed. During backside irradiation, the heavy ion ranges are tuned in such way to control whether they hit the gate or not. Gate-to-source current Igss (Phi) is measured versus heavy ions (H.I.) fluence Phi. Post-irradiation-gate-stress-test (PGST) allows measurement of gate breakdown voltage V-BD (Phi) which is observed to decrease with (H.I.) fluence. Based on these experimental results, a hypothesis of substrate-generated carriers impact overlap of multiple strikes may explain gate degradation until SEGR triggering. This last hypothesis is supported by a statistical model approach of heavy ions multiple impacts.
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Peyre, D., Poivey, C., Binois, C., Mangeret, R., Salvaterra, G., Beaumel, M., Pontoni, F., Bouchet, T., Pater, L., Bezerra, F., Ecoffet, R., Lorfevre, E., Sturesson, F., Berger, G., Foy, J. C., & Piquet, B. (2008). SEGR Study on Power MOSFETs: Multiple Impacts Assumption. IEEE Transactions on Nuclear Science, 55(4), 2181-2187. https://doi.org/10.1109/TNS.2008.2001925 (Original work published 2008)