On the temperature dependence of frequency dispersion in C-V measurements of III-V MOS devices and its application in spatial profiling of border traps
(2015) Applied Physics Letters — Vol. 107, n° 5, p. 053504-1 - 053504-5 (2015)
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- Abstract
- This paper presents a detailed investigation of the temperature dependence of frequency dispersion observed in capacitance-voltage (C-V) measurements of III-V metal-oxide-semiconductor (MOS) devices. The dispersion in the accumulation region of the capacitance data is found to change from 4%–9% (per decade frequency) to ∼0% when the temperature is reduced from 300 K to 4 K in a wide range of MOS capacitors with different gate dielectrics and III-V substrates. We show that such significant temperature dependence of C-V frequency dispersion cannot be due to the temperature dependence of channel electrostatics, i.e., carrier density and surface potential. We also show that the temperature dependence of frequency dispersion, and hence, the capture/emission process of border traps can be modeled by a combination of tunneling and a “temperature-activated” process described by a non-radiative multi-phonon model, instead of a widely believed single-step elastic tunneling process.
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Vais, A., Lin, H.-C., Dou, C., Martens, K., Ivanov, T., Xie, Q., Tang, F., Given, M., Maes, J., Collaert, N., Raskin, J.-P., & et al. (2015). On the temperature dependence of frequency dispersion in C-V measurements of III-V MOS devices and its application in spatial profiling of border traps. Applied Physics Letters, 107(5), 053504-1 - 053504-5. https://doi.org/10.1063/1.4928332 (Original work published 2015)